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圆环上的Schottky定理

本文利用Poincare度量,证明了圆环1/r  (本文共6页) 阅读全文>>

《北京大学学报(自然科学版)》1990年05期
北京大学学报(自然科学版)

圆环上的Schottky定理

设ρ(z)表示C\{0,1}上的Poincare度量、如所周知, z=λ(τ),这里λ(τ)是椭圆模函数。借助λ(1+it(α))=-α定义...  (本文共8页) 阅读全文>>

《Nuclear Science and Techniques》2020年02期
Nuclear Science and Techniques

Comparison of time-related electrical properties of PN junctions and Schottky diodes for Zn O-based betavoltaic batteries

Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries, in which 0.101121 Ci ~(63)Ni was selected as the beta source. The time-related electrical properties were obtained using Monte Carlo simulations. For the n-type ZnO, the Pt/ZnO Schottky diode had the highe...  (本文共12页) 阅读全文>>

《量子电子学报》2020年01期
量子电子学报

Manipulating the coupling strength in a strongly coupled quantum dot-cavity system

We report on high-resolution photocurrent (PC) spectroscopies of a single self-assembled I...  (本文共1页) 阅读全文>>

《Chinese Physics Letters》2020年03期
Chinese Physics Letters

Performance Analyses of Planar Schottky Barrier MOSFETs with Dual Silicide Layers at Source/Drain on Bulk Substrates and Material Studies of ErSi_x/CoSi_2/Si Stack Interface

A dual silicide layer structure is proposed for Schottky barrier metal-oxide-semiconductor held effect transistors(MOSFETs) on bulk substrates.The source/drain regions are designed to be composed with dual stacked silicide layers,forming different barrier heights to silicon channel.Performance comparisons between the dual barrier structure and the single barrier st...  (本文共5页) 阅读全文>>

《Journal of Semiconductors》2020年10期
Journal of Semiconductors

Comparative study of various methods for extraction of multi-quantum wells Schottky diode parameters

In this work, forward current voltage characteristics for multi-quantum wells Al_(0.33)Ga_(0.67) As Schottky diode were measured at temperature ranges from 100 to 300 K. The main parameters of this Schottky diode, such as the ideality factor, barrier height, series resistance and satur...  (本文共5页) 阅读全文>>

《Journal of Semiconductors》2019年01期
Journal of Semiconductors

Temperature-dependent electrical properties of β-Ga_2O_3Schottky barrier diodes on highly doped single-crystal substrates

Beta-phase gallium oxide(β-Ga_2O_3) Schottky barrier diodes were fabricated on highly doped single-crystal substrates,where their temperature-dependent electrical properties were comprehensively investigated by forward and reverse current density – voltage and capacitance – voltage characterization. Both the Schottky barrier height and the ideality factor showed a temperature-dependence behavior, re...  (本文共7页) 阅读全文>>