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核磁共振测井T_(2cutoff)确定方法探讨

目前核磁共振测井应用的困难之一是 T2 cutoff确定问题。 T2 cutoff是测井解释中最基本的解释参数。核磁共振实验是确定 T2  (本文共5页) 阅读全文>>

《测井技术》2019年04期
测井技术

基于岩石物理实验束缚水饱和度约束的T_(2,cutoff)优化方法

核磁共振T_2谱包含储层孔隙结构和流体的重要信息,通过对鄂尔多斯盆地不同地区不同层位核磁共振岩石物理实验T_2谱与核磁共振测井T_2谱之间对应关系进行定性与定量研...  (本文共6页) 阅读全文>>

《Rare Metals》2011年03期
Rare Metals

Characteristics of n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm

n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm were successfully grown by one-step liquid phase epitaxy (LPE) tech-nology. Scanning electron microscopy (SEM) images and X-ray diffraction (XRD) patterns showed the mirror smooth surface, flat inter...  (本文共3页) 阅读全文>>

《Research in Astronomy and Astrophysics》2014年06期
Research in Astronomy and Astrophysics

Hard X-ray emission cutoff in the anomalous X-ray pulsar 4U 0142+61 detected by INTEGRAL

The anomalous X-ray pulsar 4U 0142+61 has been studied with observations from INTEGRAL. The hard X-ray spectrum in the range 18–500 keV for4U 0142+61 was derived using nearly nine years of INTEGRAL/IBIS data. We obtained the average hard X-ray spectrum of 4U 0142+61 with all available data. The spectrum of 4U 0142+61 can be fitted with a power law that includes an exponential high energy cutoff. This average spectrum...  (本文共10页) 阅读全文>>

《Journal of Central South University of Technology》2010年03期
Journal of Central South University of Technology

Dynamic optimization of cutoff grade in underground metal mining

In order to maximize the overall economic gain from a metal mine operation, selection of cutoff grades must consider two important aspects: the time value of money and the spatial variation of the grade distribution in the deposit. That is, cutoff grade selection must be dynamic with respect to both time and space. A newly developed method that fulfills these requirements is presented. In this method, the deposit or ...  (本文共6页) 阅读全文>>

《Rare Metals》2009年04期
Rare Metals

Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy

InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy (LPE) technology. The epilayers were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) transmittance measurements a...  (本文共4页) 阅读全文>>